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High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF

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Shenzhen Koben Electronics Co., Ltd.

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Brand Name : NXP

Model Number : BLF174XR

Certification : IEC

Place of Origin : USA

MOQ : 1 piece

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000 pieces per year

Delivery Time : 1-2 working days

Packaging Details : factory standard packing

Condition : 100% Brand New Product

Part Status : Active

Package : SOT1214A

Lead Free Status / RoHS Status : Compliant

Output Power : 600W

Voltage : 50V

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BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A

600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band

Feature

1, Easy power control

2, Integrated ESD protection

3, Excellent ruggedness

4, High efficiency

5, Excellent thermal stability

6, Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Application

Industrial, scientific and medical applications

Broadcast transmitter applications

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Product Tags:

high power mosfet transistors

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